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| TLP141G TENTATIVE TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP141G Programmable Controllers AC-Output Module Solid State Relay Unit in mm The TOSHIBA mini flat coupler TLP141G is a small outline coupler, suitable for surface mount assembly. The TLP141G consists of a photo thyristor, optically coupled to a gallium arsenide infrared emitting diode. * * * * * Peak off-state voltage: 400 V (min.) Trigger LED current: 10 mA (max.) On-state current: 150 mA (max.) Isolation voltage: 2500 Vrms (min.) UL recognized: UL1577, file no. E67349 TOSHIBA Weight: 0.09 g 11-4C2 Pin Connections 1 6 5 3 4 1 : Anode 3 : Cathode 4 : Cathode 5 : Anode. 6 : Gate 1 2002-09-25 TLP141G Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating (Ta 53C) LED Peak forward current (100 s pulse, 100 pps) Reverse voltage Junction temperature Peak forward voltage(RGK = 27k) Peak reverse voltage(RGK = 27k) Detector On-state current On-state current derating (Ta 25C) Peak one cycle surge current Peak reverse gate voltage Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min., RH 60%) (Note 1) Symbol IF IF/C IFP VR Tj VDRM VDRM IT(RMS) IT / C ITSM VGM Tj Tstg Topr Tsol BVS Rating 50 -0.7 1 5 125 400 400 150 -2.0 2 5 100 -55~125 -55~100 260 2500 Unit mA mA / C A V C V V mA mA / C A V C C C C Vrms (Note 1) Device considered a two terminal device: pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Operating temperature Gate to cathode resistance Gate to cathode capacitance Symbol VAC IF Topr RGK CGK Min. 15 -25 Typ. 20 27 0.01 Max. 120 25 85 33 0.1 Unit Vac mA C k F 2 2002-09-25 TLP141G Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage LED Reverse current Capacitance Off-state current Symbol VF IR CT IDRM Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz VAK = 400 V RGK = 27 k VKA = 70 mA RGK = 27 k ITM = 100 mA RGK = 27 k VAK = 280 V, RGK = 27 k V = 0, f = 1 MHz Anode to gate Gate to cathode Ta = 25C Ta = 100C Ta = 25C Ta = 100C Min. 1.0 5 Typ. 1.15 30 10 1 10 1 0.9 0.2 10 20 350 Max. 1.3 10 5000 100 5000 100 1.3 1 Unit V A pF nA A nA A V mA V / s pF Reverse current Detector On-state voltage Holding current Off-state dv / dt Capacitance IRRM VTM IH dv/dt Cj Coupled Characteristics (Ta = 25C) Characteristic Trigger LED current Turn-on time Coupled dv / dt Capacitance (input to output) Isolation resistance Symbol IFT ton dv/dt CS RS Test Condition VAK = 6 V, RGK = 27k IF = 50mA, RGK = 27k VS = 500 V, RGK = 27k VS = 0, f = 1 MHz VS = 500 V, R.H. 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. 500 5x10 10 Typ. 4 10 0.8 10 14 Max. 10 Unit mA s V / s pF Vrms Vdc 2500 5000 5000 3 2002-09-25 TLP141G I F - Ta 100 250 IT(RMS) - Ta 80 Allowable forward current IF (mA) 200 60 R.m.s. on-state current IT(RMS) (mA) 0 20 40 60 80 100 120 150 40 100 20 50 0 20 0 20 0 20 40 60 80 100 120 Ambient temperature Ta (C) IFP - DR 3000 Pulse width 100 s Ta = 25C 100 Ta = 25C IF - VF Allowable pulsed forward current IFP (mA) 1000 IF (mA) Forward current 103 3 102 3 101 3 100 30 10 3 100 1 30 0.3 10 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Duty cycle ratio DR Forward voltage VF (V) VF/Ta Forward voltage temperature coeffecient VF/ rTa (mV/C)C (mA) 3.2 - IF 1000 IFP - VFP 2.8 2.4 2.0 1.6 1.2 Pulse forward current IFP (mA) 300 100 30 10 Pulse width 10 s Pepetitive frequency 3 1 0.6 = 100 Hz Ta = 25C 0.8 0.4 0.1 0.3 0.5 1 3 5 10 30 50 1.0 1.4 1.8 2.2 2.6 3.0 Forward current IF (mA) Pulse forward voltage VFP (V) 4 2002-09-25 TLP141G ton - IF 30 Ta = 25C RL=100 200 dv / dt - RGK Ta = 25C Critical rate of rise of Off-state voltage dv / dt (V / s) (s) VAA=50V 20 100 VAK=200V 50 30 400V ton Turn-on time RGK=10k 10 27k 1 0 10 20 30 40 10 Forward current IF(mA) 1 VA=6V RL=100 3 5 10 30 50 100 IFT - Ta 20 Gate-cathode resistance RGK (k) Trigger LED current IFT (mA) 10 RGK=10k 100 IFT - RGK Ta = 25C VAK=6V 50 30 RL=100 5 27k 3 0 20 40 60 80 100 Ambient temperature Ta (C) IH - Ta 0.7 0.5 RGK=10k Trigger LED current IFT (mA) 10 5 Holding current IH (mA) 0.3 27k 2 1 3 5 10 30 50 100 200 Gate-cathode resistance RGK (k) 0.1 0 20 40 60 80 100 Ambient temperature Ta (C) IH - RGK 5 3 Ta = 25C dv / dt - CGK Ta = 85C VAK = 400V 300 R GK= 27k 500 Holding current IH (mA) Critical rate of rise of off-state voltage dv / dt (V/s) 1 100 50 30 0.5 0.3 10 5 0.001 0.1 1 0.003 0.005 0.01 3 5 10 30 50 100 200 Gate-cathode capacitance CGK(F) Gate-cathode resistance RGK (k) 5 2002-09-25 TLP141G RESTRICTIONS ON PRODUCT USE 000707EBC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-09-25 |
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